n-c hannel e nhancement mode f ield e ffect t rans is tor to-252 and to-251 package. s amhop microelectronics corp. arp,12 2005 ver1.2 p r oduc t s ummar y v ds s i d r ds (on) ( m )max 55v 10a 55 @ v gs =10v 80 @ v gs =4.5v features super high dense cell design for low r ds (on ). r ugged and reliable. s g d stu series to-252aa(d-pak) std series to-251(l-pak) g g s s d d s tu/d1955nl parameter symbol unit drain-s ource voltage v ds v g a te -s ourc e v olta ge v gs v drain c urrent-c ontinuous @ t a -p ulsed i d 50 a a a w i dm drain-s ource diode forward current i s maximum p ower dis s ipation p d o perating j unction and s torage temperature r ange t j ,t stg -55 to 175 c a a a b 55 15 20 10 23 25 c 70 c ta= 25 c ta=70 c 35 8 a limit thermal characteristics thermal r esistance, junction-to-case thermal r esistance, junction-to-ambient r jc 3 50 r ja /w c /w c absolute maximum ratings (t a =25 c unless otherwise noted) drain-s ource voltage r ating vspike (d) 60 v
= parameter symbol condition min typ max unit off characteristics drain-s ource breakdown voltage bv ds s = v gs 0v, i d 250ua = 55 v zero g ate voltage drain c urrent i ds s v ds 44v, v gs 0v == 1 gate-body leakage i gss v gs 20v, v ds 0v = = 100 na on char acte r is tics b g ate t hreshold voltage v gs(th) v ds v gs ,i d = 250ua = 1.0 3.0 v d ra in-s ourc e o n-s ta te r e s is ta nc e r ds (on) v gs 10v, i d 8a v gs 4.5v, i d 4a 65 80 on-state drain current i d(on) v ds =5v,v gs = 10v a s f orward trans conductance fs g v ds 10v, i d 8a dynamic characteristics c input capacitance c is s c rss c oss o utput c a pa c ita nc e r everse transfer capacitance v ds =30v, v gs =0v f=1.0mh z p f p f p f s witc hing c har ac te r is tic s c turn-on delay time rise time turn-o ff delay time t d(on) t r t d(off) t f v dd = 30v i d =8a v gs = 10v r gen =6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =15v, i d =8a v gs =10v nc nc nc c fall time = = = = == 2 5 55 ua mohm mohm n-channel electrical characteristics (t a 25 c unles s otherwis e noted) v ds =15v, i d =8a,v gs =10v nc v ds =15v, i d =8a,v gs =5v 15 50 75 635 12.8 9.8 14.5 5.3 10.6 3.8 2.6 7.1 10 ohm rg gate resistance v gs =0v, v ds = 0v, f=1.0mh z 718 87 57 2.6 13 6 17 11 14 8 3 5 s tu/d1955nl 1.9 42
parameter symbol c ondition min typ max unit e le ctr ical char acte r is tics (t c =25 c unles s otherwis e noted) dr ain-s our ce diode char acte r is tics diode f orward voltage v sd v gs = 0v, is = 15a 1.3 v a notes c.guaranteed by design, not subject to production testing. b.pulse test:pulse width 300us, duty cycle 2%. figure 2. transfer characteristics f igure 4. o n-r es is tance variation with drain c urrent and temperature figure 3. capacitance v ds , drain-to s ource voltage (v ) v gs , g ate-to-s ource voltage (v ) c, capacitance (pf) on-resistance i d , drain c urrent (a) 3 r ds (on) , normalized s tu/d1955nl 0 5 10 15 20 25 30 1200 1000 800 600 400 200 0 -55 c 25 c 20 15 10 5 0 0 0.9 2.7 3.6 4.5 5.4 tj=125 c 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -55 -25 0 25 125 ciss coss crss 1 tj( c) 100 50 75 v gs =10v i d =8a t j, j unction t emperature ( c ) figure 1. output characteristics v ds ,drain-to-sourcevoltage(v) i d ,draincurrent(a) 20 16 12 8 4 0 0 0.5 1 1.5 2 2.5 3 v gs =5v v gs =3v v gs =4v v gs =4.5v 1.8 v gs =6v v gs =8v v gs =10v d.guaranteed when external r g=6 ohm and tf < tf max a.s urface mounted on f r 4 b oard, t 10sec.
s tu/d1955nl f igure 5. g ate t hreshold v ariation with t emperature f igure 6. b reakdown v oltage v ariation with t emperature vth, normalized g ate-s ource t hres hold v oltage g fs , t rans conductance (s ) v gs , g ate to s ource v oltage (v ) bv ds s , normalized drain-s ource b reakdown v oltage is, s ource-drain current (a) figure 7. transconductance variation with drain c urrent i ds , drain-s ource c urrent (a) figure 9. gate charge qg, total gate charge (nc) figure 10. maximum safe operating area v ds , drain-s ource v oltage (v ) figure 8. body diode forward voltage v ariation with s ource c urrent v sd , b ody diode f orward v oltage (v ) t j, j unction t emperature ( c ) tj, junction temperature ( c) i d ,draincurrent(a) 4 6 20.0 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 id=250ua 12 9 6 3 15 18 0 0 5 10 15 20 v ds =10v 10 8 6 4 2 0 03 6 9 12 15 18 21 24 v ds =30v i d =8a 40 10 1 1 0.1 0.03 0.1 1 10 50 60 10ms 10 0 ms 1 s dc v gs =10v s ingle p uls e t a =25 c r d s ( o n) limit
f igure 11. s witching t es t c ircuit f igure 12. s witching w aveforms t v v t t d(on) out in on r 10% t d(off) 90% 10% 10% 50% 50% 90% t off t f 90% pulse width 5 6 s tu/d1955nl inve r te d v dd r d v v r s v g gs in gen out l 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datasheet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05
6 s tu/d1955nl to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
s tu/d1955nl 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2 p0 p1 p2 t 6.80 2 0.1 10.3 2 0.1 2.50 2 0.1 ? 2 ? 1.5 + 0.1 -0 16.0 0.3 2 1.75 0.1 2 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 s 8 s tu/d1955nl "a " to-251 tube to251 tube/to-252 tape and r eel data
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